Gabriel Rincon-Mora's Analog IC Design with Low-Dropout Regulators (LDOs) PDF

By Gabriel Rincon-Mora

ISBN-10: 0071608931

ISBN-13: 9780071608930

Master Analog Integrated-Circuit Design

Design, study, and construct linear low-dropout (LDO) regulator ICs in bipolar, CMOS, and biCMOS semiconductor strategy applied sciences. This authoritative consultant deals a different emphasis on embedded LDO layout. via intuitive reasons and special illustrations, the ebook exhibits how one can positioned those theories to paintings growing analog ICs for the newest transportable, battery-powered devices.

Analog IC layout with Low-Dropout Regulators information the full product improvement cycle-from defining pursuits and choosing parts to blueprinting, assembling, and fine-tuning functionality. paintings with semiconductors, hire detrimental suggestions, deal with fluctuating so much, and embed regulators in ICs. additionally, you will how you can construct prototypes, practice assessments, and combine system-on-chip (SoC) performance. observe how to:

  • Design, try out, and gather BJT-, MOSFET-, and JFET-based linear regulators
  • Use present mirrors, buffers, amplifiers, and differential pairs
  • Integrate suggestions loops, damaging suggestions, and keep watch over limits
  • Maintain an self sufficient, sturdy, noise-free, and predictable output voltage
  • Compensate for low enter present and large voltage swings
  • Optimize accuracy, potency, battery existence, and integrity
  • Implement overcurrent defense and thermal-shutdown features
  • Establish energy and working limits utilizing characterization thoughts

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Additional info for Analog IC Design with Low-Dropout Regulators (LDOs) (Electronic Engineering)

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Any use is subject to the Terms of Use as given at the website. 6) where Cε″ is the capacitance per unit area and ε the permittivity of the dielectric medium, which is dielectric constant k times greater than permittivity of vacuum εo. As with the resistor, the process engineer, not the IC designer, optimally sets the separation distance, leaving again width W and length L as flexible design parameters. In the case of diffusion resistors, however, the dielectric is the depletion layer created by reverse biasing the resistor-substrate’s pn junction, the separation of which is dependent on the bias voltage across the junction, as discussed later in the pn-junction diode subsection.

Com) Copyright © 2009 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website. 5 V regulator with 500 kHz bandwidth and 300 mΩ equivalent load-regulation resistance when subjected to 0–100 mA load dumps. 2 Ω and an equivalent bypass capacitance of 1 µF. The parasitic input capacitance of the power pass device is roughly 100 pF and its transconductance 300 mA/V, and it is driven by a class-A buffer with a constant pull-down current of 5 µA. 0% ⎞ ⎛ ΔiLOAD ⎞ ⎛ ΔiLOAD ⎞ ⎛ 0 .

Any use is subject to the Terms of Use as given at the website. dpl in forward-bias conditions, and vice versa. Ultimately, however, irrespective of the region of operation, junction capacitance Cj exists across intrinsic diode D, as depicted in the complete large-signal model shown in Fig. 8a. Extrinsic Device + Vd Cj RP p n p n Maneuvering technology to build a diode necessarily introduces parasitic junctions and components to the intrinsic device. To start, the diode is a series combination of oppositely doped silicon pieces each of which introduces series parasitic resistances (RP and RN in Fig.

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Analog IC Design with Low-Dropout Regulators (LDOs) (Electronic Engineering) by Gabriel Rincon-Mora

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